dsPIC30F3013dsPIC30F3014 dsPIC30F4011 dsPIC30F4012 dsPIC30F4013 dsPIC30F5011 dsPIC30F5013 dsPIC30F5015 dsPIC30F5016 dsPIC30F6010 dsPIC30F6010A dsPIC30F6011 dsPIC30F6011A dsPIC30F6012 dsPIC30F6012A dsPIC30F6013 dsPIC30F6013A dsPIC30F6014 dsPIC30F6014A dsPIC30F6015
All VSS and VDD pins must be connected. Even if one of these pins is not connected, programming may fail.
dsPIC30F3013 is more sensitive to cross-talk between PGEC and PGED lines than other PIC devices. This may lead to programming failures, such as inability to connect or various verification failures. One of the methods to improve connectivity is to connect a small 20pF capacitor between PGEC line and VSS as close to the chip as possible. A bigger capacitor may be used, however you will have to decrease ICSP communication speed.
dsPIC30F3013 can only be programmed with HVP (High Voltage Programming). This means it requires Vpp voltage (higher than Vdd) for programming.
NSDSP-2 generates Vpp internally and can program dsPIC30F3013.
SDO1 pin will toggle at high frequency during programming. Make sure this does not harm your circuit.
Target Voltage below 4.5V
If voltage is less than 4.5V it is impossible to bulk erase the device. Unless the PIC device is code protected, NSDSP still can program the device, however, without the bulk erase it takes longer.
NSDSP cannot detect target voltage and it assumes that the voltage is above 4.5V. This ensures fast programming at usual voltages. However, if you want to program at voltages below 4.5V, you must specify the actual target voltage through programming software, or the programming will fail. If you specify the voltage below 4.5V NSDSP will apply special programming algorithm, which does not use bulk erase, but is slower than the regular algorithm.
If you are programming a device which is code protected, NSDSP cannot remove protection if the voltage is below 4.5V.
Bulk erase on dsPIC30F3013 always erase EEPROM. Therefore, when the programming software is configured to preserve EEPROM, NSDSP also uses slow row-by-row erase.
Contrary to Microchip documentation, our testing revealed that dsPIC30F3013 can perform bulk erase at any voltage from 2.5 to 5.5V, but only if the chip is uprotected. Therefore it is not necessary to use slow erase mechanisms just because the voltage is below 4.5V. However, if the chip is protected, the bulk erase can only be done above 4.5V.
We have measured time necessary to program and verify dsPIC30F3013.
|Operation||> 4.5V||< 4.5V||Programming and Verification||2.2s||2.7s||Programming only||1.6s||2.1s||Verification only||0.6s||0.6s|
The measurements reflect the time necessary to program/verify the entire chip, including all user programmable memory areas and very slow data EEPROM.
NSDSP cannot be used to debug dsPIC30F3013.
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